Thin film transistor using amorphous InGaZnO films as both channel and source/drain electrodes

被引：0
|
作者：
Park, Kyung [1 ]
Choi, Ju-Yun [1 ]
Lee, Hoo-Jeong [1 ]
Kwon, Jang-Yeon [2 ]
Kim, Hyoungsub [1 ]
机构：
[1] School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Korea, Republic of
[2] Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea, Republic of
来源：
Japanese Journal of Applied Physics | 2011年 / 50卷 / 9 PART 1期
关键词：
Compilation and indexing terms; Copyright 2025 Elsevier Inc;
D O I：
096504
中图分类号：
学科分类号：
摘要：
Thin film circuits - Thin films - Carrier concentration - Semiconducting films - Semiconducting indium compounds - Zinc compounds - Gallium compounds - Amorphous films - Conductive films - Fabrication - Electrodes - Polymer films
引用
收藏
相关论文
共 50 条
  • [1] Thin Film Transistor Using Amorphous InGaZnO Films as Both Channel and Source/Drain Electrodes
    Park, Kyung
    Choi, Ju-Yun
    Lee, Hoo-Jeong
    Kwon, Jang-Yeon
    Kim, Hyoungsub
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (09)
  • [2] High performance InGaZnO thin film transistor with InGaZnO source and drain electrodes
    Wu, Hung-Chi
    Chien, Chao-Hsin
    APPLIED PHYSICS LETTERS, 2013, 102 (06)
  • [3] Amorphous InGaZnO Thin Film Transistor Fabricated with Printed Silver Salt Ink Source/Drain Electrodes
    Yang, Caigui
    Fang, Zhiqiang
    Ning, Honglong
    Tao, Ruiqiang
    Chen, Jianqiu
    Zhou, Yicong
    Zheng, Zeke
    Yao, Rihui
    Wang, Lei
    Peng, Junbiao
    Song, Yongsheng
    APPLIED SCIENCES-BASEL, 2017, 7 (08):
  • [4] Amorphous InGaZnO thin film transistors with sputtered silver source/drain and gate electrodes
    Wu, Qi
    Xu, Ling
    Xu, Jianeng
    Xie, Haiting
    Dong, Chengyuan
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2016, 48 : 23 - 26
  • [5] Suppression of channel shortening effect for InGaZnO Thin-Film-Transistor by In-Sn-O source/drain electrodes
    Kataoka, Junji
    Saito, Nobuyoshi
    Ueda, Tomomasa
    Tezuka, Tsutomu
    Sawabe, Tomoaki
    Ikeda, Keiji
    2018 IEEE 2ND ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2018), 2018, : 175 - 177
  • [6] A Novel Amorphous InGaZnO Thin Film Transistor Structure without Source/Drain Layer Deposition
    Byung Du Ahn
    Shin, Hyun Soo
    Kim, Gun Hee
    Park, Jin-Seong
    Kim, Hyun Jae
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (03)
  • [7] A Back-Channel-Etched Amorphous InGaZnO Thin-Film Transistor Technology With Al-Doped ZnO as Source/Drain and Pixel Electrodes
    Deng, Wei
    Xiao, Xiang
    Shao, Yang
    Song, Zhen
    Lee, Chia-Yu
    Lien, Alan
    Zhang, Shengdong
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 63 (05) : 2205 - 2209
  • [8] Short channel device performance of amorphous InGaZnO thin film transistor
    Jeon, Sanghun
    Benayad, Anass
    Ahn, Seung-Eon
    Park, Sungho
    Song, Ihun
    Kim, Changjung
    Chung, U-In
    APPLIED PHYSICS LETTERS, 2011, 99 (08)
  • [9] Nitrogenated amorphous InGaZnO thin film transistor
    Liu, Po-Tsun
    Chou, Yi-Teh
    Teng, Li-Feng
    Li, Fu-Hai
    Shieh, Han-Ping
    APPLIED PHYSICS LETTERS, 2011, 98 (05)
  • [10] Direct Inkjet Printing of Silver Source/Drain Electrodes on an Amorphous InGaZnO Layer for Thin-Film Transistors
    Ning, Honglong
    Chen, Jianqiu
    Fang, Zhiqiang
    Tao, Ruiqiang
    Cai, Wei
    Yao, Rihui
    Hu, Shiben
    Zhu, Zhennan
    Zhou, Yicong
    Yang, Caigui
    Peng, Junbiao
    MATERIALS, 2017, 10 (01):
12345