Electrical characteristics of nonpolar InGaN-based light-emitting diodes evaluated at low temperature

被引：0
|
作者：
Masui, Hisashi [1 ]
Schmidt, Mathew C. [1 ]
Kim, Kwang Choong [1 ,2 ]
Chakraborty, Arpan [1 ,3 ]
Nakamura, Shuji [1 ]
DenBaars, Steven P. [1 ]
机构：
[1] Materials Department, College of Engineering, University of California, Santa Barbara, Santa Barbara, CA 93106-5050, United States
[2] Seoul Optodevice, Kyunggi-do 425-851, Korea, Republic of
[3] Cree Santa Barbara Technology Center, Goleta, CA 93117, United States
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2007年 / 46卷 / 11期
关键词：
Light emitting diodes;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
页码：7309 / 7310
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