Copper filling of deep sub-μm through-holes by high-vacuum planar magnetron sputtering using argon gas with added nitrogen: Optimum quantity of nitrogen in argon gas

被引：0

|

作者：

Saito, Shigeru ^{[1
]}

Uhara, Yoshio ^{[1
]}

Uenosono, Takahide ^{[1
]}

Nagata, Jyunichi ^{[1
]}

Oyama, Minemasa ^{[1
]}

Nozue, Masanori ^{[1
]}

Miura, Tsutomu ^{[1
]}

Soumura, Tetsuo ^{[1
]}

Kioka, Toshihide ^{[1
]}

机构：

[1] Department of Electrical Engineering, Faculty of Engineering, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8605, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1600年 / 45卷 / 2 A期

关键词：

Filling;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Journal article (JA)

引用

收藏

页码：736 / 738

相关论文

共 4 条

[1] Copper filling of deep sub-μm through-holes by high-vacuum planar magnetron sputtering using argon gas with added nitrogen:: Optimum quantity of nitrogen in argon gas
Saito, S
Uhara, Y
Uenosono, T
Nagata, J
Oyama, M
Nozue, M
Miura, T
Soumura, T
Kioka, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (2A): : 736 - 738
[2] Copper filling of deep sub-μm through-holes by high-vacuum planar magnetron sputtering using argon gas with added oxygen
Uhara, Yoshio
Urano, Tsubasa
Itoh, Masatoshi
Hayashi, Hideo
Manba, Yousuke
Taniseki, Akifumi
Jyan, Houin
Nishikawa, Eiichi
Saito, Sigeru
APPLIED SURFACE SCIENCE, 2009, 256 (04) : 1240 - 1243
[3] Copper Filling of Deep Submicrometer Trenches with Ruthenium-Lined Barrier Metal by High-Vacuum Magnetron Sputtering Using Argon Gas with Added Oxygen
Itoh, Masatoshi
Saito, Shigeru
JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (02)
[4] Filling of deep-sub-μm through holes and trenches by high vacuum planar magnetron sputter
Asamaki, T
Kato, T
Saito, S
Kasukawa, T
Geka, H
Motohashi, K
ELECTROCHEMISTRY, 2001, 69 (10) : 769 - 772