Spectral function of InAs/InGaAs quantum dots in a well detector using Green's function

被引:0
|
作者
Naser, M.A. [1 ]
Deen, M.J. [1 ]
Thompson, D.A. [1 ]
机构
[1] Department of Electrical and Computer Engineering, McMaster University, CRL 226, 1280 Main Street West, Hamilton, Ont. L8S 4K1, Canada
来源
Journal of Applied Physics | 2006年 / 100卷 / 09期
关键词
Semiconductor quantum dots;
D O I
暂无
中图分类号
学科分类号
摘要
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [31] Lateral alignment of InGaAs quantum dots as function of spacer thickness
    Wang, Zh. M.
    Rodriguez, C.
    Seydmohamadi, Sh.
    Mazur, Yu. I.
    Xie, Y. Z.
    Salamo, G. J.
    APPLIED PHYSICS LETTERS, 2009, 94 (08)
  • [32] InAs quantum dots over InGaAs for infrared photodetectors
    Pires, MP
    Landi, SM
    Tribuzy, CVB
    Nunes, LA
    Marega, E
    Souza, PL
    JOURNAL OF CRYSTAL GROWTH, 2004, 272 (1-4) : 192 - 197
  • [33] Influence of quantum well and barrier composition on the spectral behavior of InGaAs quantum dots-in-a-well infrared photodetectors
    Jolley, G.
    Tan, L. Fu H. H.
    Jagadish, C.
    APPLIED PHYSICS LETTERS, 2007, 91 (17)
  • [34] Low-strain InAs/InGaAs/GaAs quantum dots-in-a-well infrared photodetector
    Shenoi, R. V.
    Attaluri, R. S.
    Siroya, A.
    Shao, J.
    Sharma, Y. D.
    Stintz, A.
    Vandervelde, T. E.
    Krishna, S.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2008, 26 (03): : 1136 - 1139
  • [35] Broad-band photoresponse from InAs quantum dots embedded into InGaAs graded well
    Liang, J
    Chua, YC
    Manasreh, MO
    Marega, E
    Salamo, GJ
    IEEE ELECTRON DEVICE LETTERS, 2005, 26 (09) : 631 - 633
  • [36] Photoelectric characteristics of InAlAs/InGaAs/InAs quantum dots-in-well between double barriers
    Wei-Wei Wang
    Wen-Guo Ning
    Bin Zhang
    Fang-Min Guo
    Optical and Quantum Electronics, 2016, 48
  • [37] Photoelectric characteristics of InAlAs/InGaAs/InAs quantum dots-in-well between double barriers
    Wang, Wei-Wei
    Ning, Wen-Guo
    Zhang, Bin
    Guo, Fang-Min
    OPTICAL AND QUANTUM ELECTRONICS, 2016, 48 (02) : 1 - 7
  • [38] Height-controlled InAs quantum dots by using a thin InGaAs layer
    Kim, JS
    Yu, PW
    Lee, JI
    Kim, JS
    Kim, SG
    Leem, JY
    Jeon, M
    APPLIED PHYSICS LETTERS, 2002, 80 (25) : 4714 - 4716
  • [39] Study on superluminescent diodes using InGaAs-InAs chirped quantum dots
    Han, IK
    Heo, DC
    Song, JD
    Lee, JI
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2004, 45 (05) : 1193 - 1195
  • [40] Carrier Relaxation in InAs/InGaAs Dots-in-a-Well Structures
    Chen, Rui
    Liu, Hui-Yun
    Sun, Han-Dong
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (02)