Mn behavior in Ge0.96 Mn0.04 magnetic thin films grown on Si

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作者：
Wang, Yong [1 ]
Zou, Jin [1 ]
Zhao, Zuoming [2 ]
Han, Xinhai [2 ]
Zhou, Xiaoyu [2 ]
Wang, Kang L. [2 ]
机构：
[1] School of Engineering, Centre for Microscopy and Microanalysis, University of Queensland, Brisbane, QLD 4072, Australia
[2] Device Research Lab., Electrical Engineering, University of California at Los Angeles, Los Angeles, CA 90095, United States
来源：
Journal of Applied Physics | 2008年 / 103卷 / 06期
关键词：
Mn behaviors in the Ge0.96 Mn0.04 thin films grown on Si (001) substrates by molecular beam epitaxy were investigated by high resolution transmission electron microscopy; electron energy loss spectroscopy; and energy dispersive spectroscopy. Unlike the previously reported case of GeMn thin films grown on Ge; Mn has been found to be diffused toward to the surface during the thin film growth. When the Mn concentration is sufficiently high; Mn5 Ge3 clusters may be formed. Further annealing of the high Mn concentrated thin film promotes the formation of α-Mn metallic clusters. We believe that all these extraordinary phenomena are attributed to Si as the substrate. © 2008 American Institute of Physics;
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