Growth of high quality semi-insulating InP single crystal by suppression of compensation defects

被引：0
|
作者：
Zhao, Youwen [1 ]
Dong, Zhiyuan [1 ]
Duan, Manlong [1 ]
Sun, Wenrong [1 ]
Yang, Zixiang [1 ]
机构：
[1] Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China
来源：
Journal of Rare Earths | 2006年 / 24卷 / SUPPL.期
关键词：
Silicon compounds;
D O I：
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摘要：
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页码：75 / 77
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