InP-based planar-antenna-integrated Schottky-barrier diode for millimeter- and sub-millimeter-wave detection

被引：0

作者：

Ito, Hiroshi ^{[1
,5
]}

Nakajima, Fumito ^{[1
]}

Ohno, Tetsuichiro ^{[1
]}

Furuta, Tomofumi ^{[1
]}

Nagatsuma, Tadao ^{[2
,3
]}

Ishibashi, Tadao ^{[4
]}

机构：

[1] NTT Photonics Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan

[2] NTT Microsystem Integration Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan

[3] Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531, Japan

[4] NTT Electronics Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan

[5] Center for Natural Sciences, Kitasato University, 1-15-1 Kitasato, Sagamihara, Kanagawa 228-8555, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2008年 / 47卷 / 8 PART 1期

关键词：

An InP-based Schottky-barrier diode (SBD) is monolithically integrated with a wideband log-periodic toothed antenna for detecting millimeter- and sub-millimeter-waves at frequencies of up to the terahertz (THz) range. A module with a quasi-optical collimation lens fabricated for practical use exhibits sensitivities of 1000V/W at 300GHz and 125 V/W at 1.2THz with good linearity. Near-distance wireless transmission of 5 Gbit/s data with a 240 GHz carrier is also examined using the fabricated SBD module. © 2008 The Japan Society of Applied Physics;

D O I：

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中图分类号：

学科分类号：

摘要：

Journal article (JA)

引用

页码：6256 / 6261

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