New devices Si-rich and C-rich a-Si1-xCx thin films gas sensors based

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[1] [1,Ouadfel, M.A.
[2] Yaddaden, C.
[3] Merazga, S.
[4] Cheriet, A.
[5] Talb, L.
[6] Kaci, S.
[7] Belkacem, Y.
[8] Ouadah, Y.
[9] Menous, I.
[10] Kechouane, M.
[11] Gabouze, N.
[12] Keffous, A.
[13] Menari, H.
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Keffous, A. (keffousa@yahoo.fr) | 1600年 / Elsevier Ltd卷 / 579期
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In this paper; we present an experimental study on elaboration of Si-rich and C-rich thin films of hydrogenated amorphous silicon carbide (a-Si 1-xCx:H) using a DC magnetron co-sputtering of Si single crystal target on which are deposited different polycrystalline 6H-SiC sprigs varying from 32 to 86; with dimension of 10 ×5mm2. A comparative study of structural and optical properties has been performed and its applications in environmental field. The a-Si1-xCx:H films were investigated by scanning electron microscopy (SEM); UV-visible-NIR spectrophotometry; infrared absorption spectroscopy; secondary ion mass spectrometry (SIMS); and photoluminescence. The measured optical gap of a-Si1-xCx:H thin films depend on the carbon concentration with x varying from 0.18 to 0.30. This can be probably explained by the changes of Sp3 (silicon or film with low carbon content) to sp2 (high carbon content) configuration. Finally; different devices structures based the thin films have been investigated as gas sensors as Pd/a- Si 0.72C0.28:H with a good sensitivity of CO2 and H2 gases at low bias voltage ranging from 0.05 to 0.26 volt; respectively and a low response time of 29 s and 25 s was obtained at 165 ppm of the used gases; with a recovery time of 32 s and 23 s for CO2 and H2 gases; respectively. © 2013 Elsevier B.V. All rights reserved;
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