Effect of substrate temperature on structural and photoelectric properties of azo thin films

被引：0

作者：

Wang, Zhian ^{[1
]}

Wang, Junsheng ^{[1
]}

Han, Dakai ^{[1
]}

Tong, Honghui ^{[1
]}

机构：

[1] Southwest Institute of Physics, Chengdu 610207, China

来源：

Taiyangneng Xuebao/Acta Energiae Solaris Sinica | 2013年 / 34卷 / 02期

关键词：

Alumina - Zinc oxide - Aluminum oxide - Film preparation - Photoelectricity - II-VI semiconductors - Glass substrates - Glass;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The AZO thin films were prepared on glass substrates by DC magnetic sputtering using a ceramic target with the mass ratio of ZnO to Al2O3 = 98:2. The structures and photoelectric properties of the AZO thin films were investigated by XRD, spectrophotometer and Hall Effect. The crystallinity of the AZO thin film increases with increasing the substrate temperature. The resistivity of the AZO thin films decreases with increasing the substrate temperature up to 270°C, and then has a lower increasing rate above 300°C. The resistivity stability of AZO thin films improves with increasing the substrate temperature. The average transmittance of the prepared AZO thin films on the glasses in the band of visible light is over 80%.

引用

页码：223 / 226

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