Enhancing energy storage with binder-free nickel oxide cathodes in flexible hybrid asymmetric solid-state supercapacitors
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作者:
Kumbhar, Maruti B.
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Dayanand Sci Coll, Thin Films & Mat Sci Res Lab, Latur 413515, Maharashtra, IndiaDayanand Sci Coll, Thin Films & Mat Sci Res Lab, Latur 413515, Maharashtra, India
Kumbhar, Maruti B.
[1
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V. Patil, Vinod
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Punyashlok Ahilyadevi Holkar Solapur Univ, Sch Chem Sci, Solapur 413255, IndiaDayanand Sci Coll, Thin Films & Mat Sci Res Lab, Latur 413515, Maharashtra, India
V. Patil, Vinod
[2
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Chandak, Vaishali S.
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Dayanand Sci Coll, Thin Films & Mat Sci Res Lab, Latur 413515, Maharashtra, IndiaDayanand Sci Coll, Thin Films & Mat Sci Res Lab, Latur 413515, Maharashtra, India
Chandak, Vaishali S.
[1
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Gunjakar, Jayavant L.
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D Y Patil Educ Soc, Ctr Interdisciplinary Res CIR, Kolhapur 416006, IndiaDayanand Sci Coll, Thin Films & Mat Sci Res Lab, Latur 413515, Maharashtra, India
Gunjakar, Jayavant L.
[3
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Kulal, Prakash M.
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Shivaji Mahavidyalaya, Renapur 413527, Maharashtra, IndiaDayanand Sci Coll, Thin Films & Mat Sci Res Lab, Latur 413515, Maharashtra, India
Kulal, Prakash M.
[4
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机构:
[1] Dayanand Sci Coll, Thin Films & Mat Sci Res Lab, Latur 413515, Maharashtra, India
The need for flexible electrode materials for the development of flexible supercapacitors has drawn scientific interest recently. We present the successful synthesis of nickel oxide thin films using the successive ionic layer adsorption and reaction (SILAR) method, with the use of three different cationic precursors. This paper provides comprehensive details on the synthesized nickel oxide structure, morphology, and elemental analysis in addition to its electrochemical characteristics, which include specific capacitance (SCs), charge transfer resistance, etc. The produced nickel oxide electrodes achieved specific capacity as 120 C g- 1, 517 C g- 1, and 1147 C g- 1 with different nickel precursors such as nickel chloride, nickel nitrate, and nickel sulfate respectively, at a 1 mA cm- 2 current density. A flexible hybrid asymmetric solid-state supercapacitor (FHASS) (S:NiO//PVA-KOH//CuS) device delivered SCs of 165 Fg- 1 at a 0.5 mA cm- 2 current density, with a maximum SE of 58.87 Wh kg- 1 at SP 347 W kg- 1. FHASS device exhibits capacitive retention and coulombic efficiency of between 79 % and 96 % after 5000 successful GCD cycles. Also, the device retained an outstanding 97 % of its capacitance at a 175 degrees bending angle. Furthermore, to illustrate its real-world applicability, the constructed device underwent 30 s of charging to a lightning LED table lamp for 90 s. The fabricated device is bringing a new era of broad integration of device-grade applications.
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Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R ChinaHong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China
Jin, H. Y.
Liu, Y.
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Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R ChinaHong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China
Liu, Y.
Li, W. C.
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Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R ChinaHong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China
Li, W. C.
Mak, C. L.
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Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R ChinaHong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China
Mak, C. L.
Huang, H. T.
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Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R ChinaHong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China
Huang, H. T.
Tang, W. M.
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Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R ChinaHong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China
Tang, W. M.
Chan, H. L. W.
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Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R ChinaHong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China
Chan, H. L. W.
2014 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC),
2014,
机构:
Penn State Univ, Altoona Coll, Dept Phys, Altoona, PA 16601 USA
Penn State Univ, Mat Res Inst, University Pk, PA 16802 USAPenn State Univ, Altoona Coll, Dept Phys, Altoona, PA 16601 USA
Adu, Kofi
Ma, Danhao
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Penn State Univ, Dept Energy & Mineral Engn, University Pk, PA 16802 USA
Penn State Univ, EMS Energy Inst, University Pk, PA 16802 USAPenn State Univ, Altoona Coll, Dept Phys, Altoona, PA 16601 USA
Ma, Danhao
Wang, Yuxiang
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Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USAPenn State Univ, Altoona Coll, Dept Phys, Altoona, PA 16601 USA
Wang, Yuxiang
Spencer, Michael
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Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USAPenn State Univ, Altoona Coll, Dept Phys, Altoona, PA 16601 USA
Spencer, Michael
Rajagopalan, Ramakrishnan
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Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA
Penn State Univ, Dept Engn, Du Bois, PA 15801 USAPenn State Univ, Altoona Coll, Dept Phys, Altoona, PA 16601 USA
Rajagopalan, Ramakrishnan
Wang, C-Yu
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Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA
Penn State Univ, Dept Energy & Mineral Engn, University Pk, PA 16802 USA
Penn State Univ, EMS Energy Inst, University Pk, PA 16802 USAPenn State Univ, Altoona Coll, Dept Phys, Altoona, PA 16601 USA
Wang, C-Yu
Randall, Clive
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Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA
Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USAPenn State Univ, Altoona Coll, Dept Phys, Altoona, PA 16601 USA