Hybridized quantum dot-wetting layer states in photoluminescence of In(Ga)As/GaAs dot chain samples

被引：0
|
作者：
Dorogan, V.G. [1 ]
Mazur, Yu.I. [1 ]
Marega Jr., E. [1 ,3 ]
Tarasov, G.G. [2 ]
Ware, M.E. [1 ]
Salamo, G.J. [1 ]
机构：
[1] Arkansas Institute for Nanoscale Materials Science and Engineering, 225 Physics Building, University of Arkansas, Fayetteville, AR 72701, United States
[2] Institute of Semiconductor Physics, National Academy of Sciences, pr. Nauki 45, Kiev 03028, Ukraine
[3] Departamento de Física e Cîncia Dos Materiais, Instituto de Física de São Carlos, USP, São Carlos SP 13560-970, Brazil
来源：
Journal of Applied Physics | 2009年 / 105卷 / 12期
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摘要：
Conference article (CA)
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