Numerical simulation on factors affecting critical frequency of high-power photoconductive semiconductor switch

被引：0

作者：

Zhao Y. ^{[1
]}

Xie W. ^{[1
]}

Li H. ^{[1
]}

Liu J. ^{[1
]}

Liu H. ^{[1
]}

Zhao S. ^{[2
]}

Yuan J. ^{[1
]}

机构：

[1] Institute of Fluid Physics, CAEP, Mianyang 621900

[2] Institute of Computer Application, CAEP, Mianyang 621900

来源：

Qiangjiguang Yu Lizishu/High Power Laser and Particle Beams | 2010年 / 22卷 / 11期

关键词：

Critical frequency; Current filament; GaAs; Heat conduction; Nonlinear mode; Photoconductive semiconductor switch;

D O I：

10.3788/HPLPB20102211.2778

中图分类号：

学科分类号：

摘要：

The heat dissipation process of GaAs photoconductive semiconductor switch(PCSS) in nonlinear mode has been simulated based on finite difference time domain method(FDTD). Factors affecting the critical frequency, such as location, radius, number of current filament, dimensions of PCSS chip and environment temperature were discussed. The results are as follows: the critical frequency exponentially increases as radius and the number of current filament increases, it decreases exponentially as distance between location of current filament and surface of chip increases and thickness of chip increases. The critical frequency decreases linearly as environment temperature rises in a special range.

引用

页码：2778 / 2782

页数：4