High-quality polycrystalline silicon films with minority carrier lifetimes over 5 μs formed by flash lamp annealing of precursor amorphous silicon films prepared by catalytic chemical vapor deposition

被引：0

作者：

Ohdaira, Keisuke ^{[1
]}

Nishizaki, Shogo ^{[1
]}

Endo, Yohei ^{[1
]}

Fujiwara, Tomoko ^{[1
]}

Usami, Noritaka ^{[2
]}

Nakajima, Kazuo ^{[2
]}

Matsumura, Hideki ^{[1
]}

机构：

[1] Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan

[2] Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2007年 / 46卷 / 11期

关键词：

Polycrystalline silicon (poly-Si) films with a thickness over 1 μm are formed by the flash lamp annealing (FLA); with a duration of less than 10 ms; of precursor amorphous silicon (a-Si) films prepared by catalytic chemical vapor deposition (Cat-CVD) on quartz substrates. Thicker a-Si films can be crystallized under lower lamp irradiance; which can be understood by considering both the total generated heat in the a-Si films and the thermal diffusion into the quartz substrates. Results of microwave photoconductivity decay (μ-PCD) measurement indicate that high-pressure water vapor annealing (HPWVA) is effective for improving the minority carrier lifetime of the poly-Si films. The film with a thickness of 1.5 μm crystallized under a high lamp irradiance shows minority carrier lifetimes over 5 μs; indicating the high feasibility of applying the crystalline film to high-efficiency thin-film solar cells. © 2007 The Japan Society of Applied Physics;

D O I：

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中图分类号：

学科分类号：

摘要：

Journal article (JA)

引用

页码：7198 / 7203

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