High-quality polycrystalline silicon films with minority carrier lifetimes over 5 μs formed by flash lamp annealing of precursor amorphous silicon films prepared by catalytic chemical vapor deposition

被引：0

作者：

Ohdaira, Keisuke ^{[1
]}

Nishizaki, Shogo ^{[1
]}

Endo, Yohei ^{[1
]}

Fujiwara, Tomoko ^{[1
]}

Usami, Noritaka ^{[2
]}

Nakajima, Kazuo ^{[2
]}

Matsumura, Hideki ^{[1
]}

机构：

[1] Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan

[2] Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2007年 / 46卷 / 11期

关键词：

Polycrystalline silicon (poly-Si) films with a thickness over 1 μm are formed by the flash lamp annealing (FLA); with a duration of less than 10 ms; of precursor amorphous silicon (a-Si) films prepared by catalytic chemical vapor deposition (Cat-CVD) on quartz substrates. Thicker a-Si films can be crystallized under lower lamp irradiance; which can be understood by considering both the total generated heat in the a-Si films and the thermal diffusion into the quartz substrates. Results of microwave photoconductivity decay (μ-PCD) measurement indicate that high-pressure water vapor annealing (HPWVA) is effective for improving the minority carrier lifetime of the poly-Si films. The film with a thickness of 1.5 μm crystallized under a high lamp irradiance shows minority carrier lifetimes over 5 μs; indicating the high feasibility of applying the crystalline film to high-efficiency thin-film solar cells. © 2007 The Japan Society of Applied Physics;

D O I：

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中图分类号：

学科分类号：

摘要：

Journal article (JA)

引用

页码：7198 / 7203

共 34 条

[1] High-quality polycrystalline silicon films with minority carrier lifetimes over 5 μs formed by flash lamp annealing of precursor amorphous silicon films prepared by catalytic chemical vapor deposition
Ohdaira, Keisuke
Nishizaki, Shogo
Endo, Yohei
Fujiwara, Tomoko
Usami, Noritaka
Nakajima, Kazuo
Matsumura, Hideki
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (11): : 7198 - 7203
[2] Electrical properties of polycrystalline silicon films formed from amorphous silicon films by flash lamp annealing
Nishikawa, Takuya
Ohdaira, Keisuke
Matsumura, Hideki
CURRENT APPLIED PHYSICS, 2011, 11 (03) : 604 - 607
[3] Flash-lamp-crystallized polycrystalline silicon films with remarkably long minority carrier lifetimes
Ohdaira, Keisuke
Takemoto, Hiroyuki
Nishikawa, Takuya
Matsumura, Hideki
CURRENT APPLIED PHYSICS, 2010, 10 (03) : S402 - S405
[4] Amorphous Silicon Films Prepared by Catalytic Chemical Vapor Deposition Method
ZHONG Boqiang
SemiconductorPhotonicsandTechnology, 1998, (01) : 32 - 36
[5] Drastic Improvement of Minority Carrier Lifetimes Observed in Hydrogen-Passivated Flash-Lamp-Crystallized Polycrystalline Silicon Films
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[6] Formation of n-type polycrystalline silicon with controlled doping concentration by flash lamp annealing of catalytic CVD amorphous silicon films
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JAPANESE JOURNAL OF APPLIED PHYSICS, 2024, 63 (10)
[7] Properties of phosphorus-doped polycrystalline silicon films formed by catalytic chemical vapor deposition and successive rapid thermal annealing
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Izumi, A
Masuda, A
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[8] HIGH-QUALITY AMORPHOUS-SILICON GERMANIUM PRODUCED BY CATALYTIC CHEMICAL VAPOR-DEPOSITION
MATSUMURA, H
APPLIED PHYSICS LETTERS, 1987, 51 (11) : 804 - 805
[9] Excimer laser annealing effects of silicon-rich silicon nitride films prepared by using catalytic chemical vapor deposition
Lee, Kyoung-Min
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Lee, Youn-Jin
Kim, Sun-Jae
Han, Min-Koo
Jang, Seunghun
Han, Moonsup
Won, Sunghwan
Sok, Junghyun
Park, Kyoungwan
Hong, Wan-Shick
NANOSCALE ONE-DIMENSIONAL ELECTRONIC AND PHOTONIC DEVICES 3 (NODEPD 3), 2009, 25 (10): : 111 - 116
[10] CATALYTIC CHEMICAL VAPOR-DEPOSITION METHOD TO OBTAIN HIGH-QUALITY AMORPHOUS-SILICON AND SILICON-GERMANIUM
MATSUMURA, H
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 : 1379 - 1382

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