Synthesis and characterization of B2O3-doped zinc oxide thin films prepared via RF-magnetron sputtering

被引：0
|
作者：
Lu, Chung-Hsin [1 ]
Huang, Yu-Hsiang [1 ]
Dhobale, Ashok [1 ]
机构：
[1] Electronic and Electro-optical Ceramics Laboratory, Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2006年 / 45卷 / 1 A期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
页码：228 / 230
相关论文
共 50 条
  • [31] Highly (110)-oriented potassium niobate thin films prepared by RF-magnetron sputtering
    Kakio, Shoji
    Suzuki, Tatsunori
    Kurosawa, Hajime
    Nakagawa, Yasuhiko
    2007 IEEE ULTRASONICS SYMPOSIUM PROCEEDINGS, VOLS 1-6, 2007, : 1405 - 1408
  • [32] Characterization and optimization of zinc oxide films by rf magnetron sputtering
    Sundaram, KB
    Khan, A
    THIN SOLID FILMS, 1997, 295 (1-2) : 87 - 91
  • [33] Electronic properties of zinc oxide thin films prepared by RF magnetron sputtering for varistor applications
    Gould, R.D.
    Hassan, A.K.
    Mahmood, F.S.
    International Journal of Electronics, 1994, 76 (05):
  • [34] Wide Bandgap Zinc Oxide Thin Films Prepared by RF Magnetron Sputtering at Room Temperature
    Saxena, Gaurav
    Paily, Roy
    IETE JOURNAL OF RESEARCH, 2020, 66 (04) : 579 - 585
  • [35] Characterization of aluminum-doped zinc oxide thin films by RF magnetron sputtering at different substrate temperature and sputtering power
    Hung-Wei Wu
    Ru-Yuan Yang
    Chin-Min Hsiung
    Chien-Hsun Chu
    Journal of Materials Science: Materials in Electronics, 2013, 24 : 166 - 171
  • [36] Growth and characterization of BaBi2Nb2O9 thin films made by RF-magnetron sputtering
    Mazon, T
    Joanni, E
    Fernandes, JRA
    Zaghete, MA
    Cilense, M
    Varela, JA
    FERROELECTRICS, 2003, 293 : 201 - 207
  • [37] Characterization of aluminum-doped zinc oxide thin films by RF magnetron sputtering at different substrate temperature and sputtering power
    Wu, Hung-Wei
    Yang, Ru-Yuan
    Hsiung, Chin-Min
    Chu, Chien-Hsun
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2013, 24 (01) : 166 - 171
  • [38] Hydrogen influence on gallium arsenide thin films prepared by rf-magnetron sputtering technique
    Vilcarromero, J.
    Bustamante, R.
    da Silva, J. H. D.
    BRAZILIAN JOURNAL OF PHYSICS, 2006, 36 (3B) : 1035 - 1037
  • [39] Optical characterization and microstructure of BaTiO3 thin films obtained by RF-magnetron sputtering
    Ianculescu, A.
    Gartner, M.
    Despax, B.
    Bley, V.
    Lebey, Th.
    Gavrila, R.
    Modreanu, M.
    APPLIED SURFACE SCIENCE, 2006, 253 (01) : 344 - 348
  • [40] Photoemission study of the tin doped cerium oxide thin films prepared by RF magnetron sputtering
    Tsud, N.
    Skala, T.
    Masek, K.
    Hanys, P.
    Takahashi, M.
    Suga, H.
    Mori, T.
    Yoshikawa, H.
    Yoshitake, M.
    Kobayashi, K.
    Matolin, V.
    THIN SOLID FILMS, 2010, 518 (08) : 2206 - 2209
12345