Influence of AlN buffer layer thickness on material and electrical properties of InAlN/GaN high-electron-mobility transistors

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作者：
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu [1 ]
30010, Taiwan
不详 [2 ]
30010, Taiwan
不详 [3 ]
320, Taiwan
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来源：
Jpn. J. Appl. Phys. | / 7卷
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Compilation and indexing terms; Copyright 2025 Elsevier Inc;
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摘要：
Gallium nitride - Aluminum nitride - III-V semiconductors - Atomic force microscopy - Sapphire - Electron mobility - Buffer layers - Indium compounds
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