Effect of rapid thermal process on oxygen precipitation in electron irradiated czochralski silicon

被引：0
|
作者：
Cai, Lili [1 ]
Chen, Guifeng [2 ]
Li, Yangxian [2 ]
机构：
[1] Foundation Department, North China Institute of Science and Technology, Beijing 101601, China
[2] School of Material Science and Engineering, Hebei University of Technology, Tianjin 300130, China
来源：
Kuei Suan Jen Hsueh Pao/Journal of the Chinese Ceramic Society | 2010年 / 38卷 / 02期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
11
引用
收藏
页码：196 / 200
相关论文
共 50 条
  • [31] Evidence for the effect of carbon on oxygen precipitation in Czochralski silicon crystal
    Liu, PD
    Ma, XU
    Zhang, JX
    Li, LB
    Que, DL
    JOURNAL OF APPLIED PHYSICS, 2000, 87 (08) : 3669 - 3673
  • [32] Effect of rapid thermal annealing on oxygen precipitation behavior in silicon wafers
    Akatsuka, M., 1600, Japan Society of Applied Physics (40):
  • [33] Effect of rapid thermal annealing on oxygen precipitation behavior in silicon wafers
    Akatsuka, M
    Okui, M
    Morimoto, N
    Sueoka, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2001, 40 (5A): : 3055 - 3062
  • [34] Germanium effect on as-grown oxygen precipitation in Czochralski silicon
    Chen, Jiahe
    Yang, Deren
    Li, Hong
    Ma, Xiangyang
    Que, Duanlin
    JOURNAL OF CRYSTAL GROWTH, 2006, 291 (01) : 66 - 71
  • [35] Effect of oxygen precipitation on the performance of Czochralski silicon solar cells
    Chen, Lin
    Yu, Xuegong
    Chen, Peng
    Wang, Peng
    Gu, Xin
    Lu, Jinggang
    Yang, Deren
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2011, 95 (11) : 3148 - 3151
  • [36] Effect of rapid thermal process on oxygen precipitation and denuded zone in nitrogen-doped silicon wafers
    Yu, XG
    Yang, DR
    Ma, XY
    Que, DL
    MICROELECTRONIC ENGINEERING, 2003, 69 (01) : 97 - 104
  • [37] Influence of copper precipitation on oxygen precipitation in Czochralski silicon
    Xi, ZQ
    Yang, DR
    Chen, J
    Xu, J
    Ji, YJ
    Que, DL
    Moeller, HJ
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (03) : 299 - 305
  • [38] Influence of oxygen precipitation on copper precipitation in Czochralski silicon
    Xu, Jin
    Wang, Nating
    Yang, Deren
    JOURNAL OF APPLIED PHYSICS, 2012, 111 (09)
  • [39] Influence of oxygen precipitation on copper precipitation in Czochralski silicon
    Xu, Jin
    Wang, Nating
    Yang, Deren
    Journal of Applied Physics, 2012, 111 (09):
  • [40] Effects of high temperature rapid thermal processing on oxygen precipitation in heavily arsenic-doped Czochralski silicon
    Wang, Biao
    Zhang, Xinpeng
    Ma, Xiangyang
    Yang, Deren
    JOURNAL OF CRYSTAL GROWTH, 2011, 318 (01) : 183 - 186
12345