Staebler-Wronski-like formation of defects at the amorphous-silicon- crystalline silicon interface during illumination

被引：0

作者：

Plagwitz, Heiko ^{[1
]}

Terheiden, Barbara ^{[1
]}

Brendel, Rolf ^{[1
]}

机构：

[1] Institut für Solarenergieforschung Hameln/Emmerthal (ISFH), Am Ohrberg 1, D-31860 Emmerthal, Germany

来源：

Journal of Applied Physics | 2008年 / 103卷 / 09期

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摘要：

Journal article (JA)

引用

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[1] Staebler-Wronski-like formation of defects at the amorphous-silicon-crystalline silicon interface during illumination
Plagwitz, Heiko
Terheiden, Barbara
Brendel, Rolf
JOURNAL OF APPLIED PHYSICS, 2008, 103 (09)
[2] Topological defects and the Staebler-Wronski effect in hydrogenated amorphous silicon
Du, MH
Zhang, SB
APPLIED PHYSICS LETTERS, 2005, 87 (19) : 1 - 3
[3] Microscopic nature of Staebler-Wronski defect formation in amorphous silicon
Biswas, R
Pan, BC
APPLIED PHYSICS LETTERS, 1998, 72 (03) : 371 - 373
[4] Staebler-Wronski effect in hydrogenated amorphous silicon
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Shenoy, SR
PHYSICS LETTERS A, 1996, 218 (1-2) : 85 - 90
[5] THE STAEBLER-WRONSKI EFFECT IN AMORPHOUS HYDROGENATED SILICON
WAGNER, D
ACTA PHYSICA AUSTRIACA, 1985, 57 (3-4): : 251 - 275
[6] Modelling of Staebler-Wronski effect in hydrogenated amorphous silicon under moderate and intense illumination
Meftah, AF
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[7] Staebler-Wronski effect in amorphous silicon and its alloys
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OPTO-ELECTRONICS REVIEW, 2004, 12 (01) : 21 - 32
[8] KINETICS OF THE STAEBLER-WRONSKI EFFECT IN HYDROGENATED AMORPHOUS-SILICON
STUTZMANN, M
JACKSON, WB
TSAI, CC
APPLIED PHYSICS LETTERS, 1984, 45 (10) : 1075 - 1077
[9] THE ABSENCE OF THE STAEBLER-WRONSKI EFFECT IN FLUORINATED AMORPHOUS SILICON.
Janai, M.
Stutzmann, M.
Weil, R.
Solar Cells: Their Science, Technology, Applications and Economics, 1985, 14 (02): : 191 - 192
[10] DYNAMICS OF STAEBLER-WRONSKI EFFECT IN HYDROGENATED AMORPHOUS-SILICON
KAZANSKII, AG
MILICHEVICH, EP
VAVILOV, VS
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 : 787 - 790

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