Staebler-Wronski-like formation of defects at the amorphous-silicon- crystalline silicon interface during illumination

被引：0

作者：

Plagwitz, Heiko ^{[1
]}

Terheiden, Barbara ^{[1
]}

Brendel, Rolf ^{[1
]}

机构：

[1] Institut für Solarenergieforschung Hameln/Emmerthal (ISFH), Am Ohrberg 1, D-31860 Emmerthal, Germany

来源：

Journal of Applied Physics | 2008年 / 103卷 / 09期

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摘要：

Journal article (JA)

引用

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[22] DRIFT MOBILITY AND STAEBLER-WRONSKI EFFECT IN HYDROGENATED AMORPHOUS-SILICON
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SHAH, A
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[23] Direct role of hydrogen in the Staebler-Wronski effect in hydrogenated amorphous silicon
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[24] THE STAEBLER-WRONSKI EFFECT AND THE MEYER-NELDEL RULE IN AMORPHOUS-SILICON
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[27] STAEBLER-WRONSKI EFFECT IN PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON
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[28] Metastable defect creation in tritiated hydrogenated amorphous silicon and the Staebler-Wronski effect
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[29] A hydrogen-related defect and the Staebler-Wronski effect in hydrogenated amorphous silicon
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[30] APPARENT GETTERING OF THE STAEBLER-WRONSKI EFFECT IN AMORPHOUS-SILICON SOLAR-CELLS
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