Inelastic tunneling spectroscopy of magnetic tunnel junctions based on CoFeB/MgO/CoFeB with Mg insertion layer

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作者：
Miao, Guo-Xing [1 ,2 ]
Chetry, Krishna B. [1 ]
Gupta, Arunava [1 ]
Butler, William H. [1 ]
Tsunekawa, Koji [3 ]
Djayaprawira, David [3 ]
Xiao, Gang [2 ]
机构：
[1] MINT Center, University of Alabama, Tuscaloosa, AL 35487
[2] Physics Department, Brown University, Providence, RI 02912
[3] Anelva Corporation, 5-8-1 Yotsuya, Fuchu, Tokyo 183-8508, Japan
来源：
Journal of Applied Physics | 2006年 / 99卷 / 08期
关键词：
Magnetic tunnel junctions (MT[!text type='Js']Js[!/text]) based on textured MgO barriers have thus far shown the highest tunneling magnetoresistance (TMR) at room temperature. In contrast to traditional magnetic tunnel junctions; it appears that the large TMR observed in these systems arises from a type of coherent tunneling in which the symmetry of the Bloch state wave functions plays a critical role. We have fabricated MT[!text type='Js']Js[!/text] with artificial asymmetric barriers by depositing a thin layer of Mg of varying thickness (0-10 Å) prior to the growth of the MgO barrier into otherwise identical CoFeBMgOCoFeB MT[!text type='Js']Js[!/text]. The inelastic tunnel spectrum shows magnon and phonon excitation peaks similar to traditional Al2 O3 barriers; and an additional peak at about 300 meV. The conventional interpretation that this peak corresponds to density of states of the s electrons in the ferromagnetic electrodes; however; does not apply in the MgO system. © 2006 American Institute of Physics;
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