High efficiency and low roll-off white phosphorescent organic light-emitting diodes by employing various acceptor ratio in exciplex-forming co-host
被引:0
|
作者:
Hua, Jie
论文数: 0引用数: 0
h-index: 0
机构:
Jilin Normal Univ, Coll Informat Technol, Jilin Engn Res Ctr Optoelect Mat & Devices, Siping 136000, Peoples R China
Jilin Normal Univ, Jilin Prov Key Lab Wide Bandgap Semicond Mat Growt, Changchun 130103, Peoples R ChinaJilin Normal Univ, Coll Informat Technol, Jilin Engn Res Ctr Optoelect Mat & Devices, Siping 136000, Peoples R China
Hua, Jie
[1
,2
]
Qi, Lijun
论文数: 0引用数: 0
h-index: 0
机构:
Jilin Normal Univ, Coll Informat Technol, Jilin Engn Res Ctr Optoelect Mat & Devices, Siping 136000, Peoples R ChinaJilin Normal Univ, Coll Informat Technol, Jilin Engn Res Ctr Optoelect Mat & Devices, Siping 136000, Peoples R China
Qi, Lijun
[1
]
Cheng, Zeyuan
论文数: 0引用数: 0
h-index: 0
机构:
Jilin Normal Univ, Coll Informat Technol, Jilin Engn Res Ctr Optoelect Mat & Devices, Siping 136000, Peoples R ChinaJilin Normal Univ, Coll Informat Technol, Jilin Engn Res Ctr Optoelect Mat & Devices, Siping 136000, Peoples R China
Cheng, Zeyuan
[1
]
Zhan, Zhuolin
论文数: 0引用数: 0
h-index: 0
机构:
Jilin Normal Univ, Coll Informat Technol, Jilin Engn Res Ctr Optoelect Mat & Devices, Siping 136000, Peoples R China
Jilin Normal Univ, Jilin Prov Key Lab Wide Bandgap Semicond Mat Growt, Changchun 130103, Peoples R ChinaJilin Normal Univ, Coll Informat Technol, Jilin Engn Res Ctr Optoelect Mat & Devices, Siping 136000, Peoples R China
Zhan, Zhuolin
[1
,2
]
Chai, Yuan
论文数: 0引用数: 0
h-index: 0
机构:
Jilin Normal Univ, Coll Informat Technol, Jilin Engn Res Ctr Optoelect Mat & Devices, Siping 136000, Peoples R China
Jilin Normal Univ, Jilin Prov Key Lab Wide Bandgap Semicond Mat Growt, Changchun 130103, Peoples R ChinaJilin Normal Univ, Coll Informat Technol, Jilin Engn Res Ctr Optoelect Mat & Devices, Siping 136000, Peoples R China
Chai, Yuan
[1
,2
]
Dong, He
论文数: 0引用数: 0
h-index: 0
机构:
Jilin Normal Univ, Coll Informat Technol, Jilin Engn Res Ctr Optoelect Mat & Devices, Siping 136000, Peoples R China
Jilin Normal Univ, Jilin Prov Key Lab Wide Bandgap Semicond Mat Growt, Changchun 130103, Peoples R ChinaJilin Normal Univ, Coll Informat Technol, Jilin Engn Res Ctr Optoelect Mat & Devices, Siping 136000, Peoples R China
Dong, He
[1
,2
]
Wang, Jin
论文数: 0引用数: 0
h-index: 0
机构:
Jilin Normal Univ, Coll Informat Technol, Jilin Engn Res Ctr Optoelect Mat & Devices, Siping 136000, Peoples R China
Jilin Normal Univ, Jilin Prov Key Lab Wide Bandgap Semicond Mat Growt, Changchun 130103, Peoples R ChinaJilin Normal Univ, Coll Informat Technol, Jilin Engn Res Ctr Optoelect Mat & Devices, Siping 136000, Peoples R China
Wang, Jin
[1
,2
]
机构:
[1] Jilin Normal Univ, Coll Informat Technol, Jilin Engn Res Ctr Optoelect Mat & Devices, Siping 136000, Peoples R China
[2] Jilin Normal Univ, Jilin Prov Key Lab Wide Bandgap Semicond Mat Growt, Changchun 130103, Peoples R China
The exciplex-forming co-host system has demonstrated significant potential in the development of high-efficiency white organic light-emitting diodes (WOLEDs). However, there have been limited investigations into the electroluminescence (EL) performance of WOLEDs utilizing exciplex-forming co-hosts with varying electron donor/electron acceptor mixing ratios. In this work, we fabricated two complementary-color WOLEDs by employing PO-01-TB doped in the mCP:PO-T2T exciplexforming co-host and FIrpic doped mCP host as the orange and the blue emission layers, respectively. The effects of various mixing ratios of mCP:PO-T2T on device performance were explored. It was observed that decreasing the PO-T2T content resulted in a blue shift in the emission peak, indicating an increase in the energy of the mCP:PO-T2T exciplex. The enhancement facilitates the energy transfer to the blue phosphor FIrpic, thereby improving the exciton utilization and reducing efficiency roll-off at high luminance. By optimizing the device structure, the all-phosphorescent warm WOLED using mCP:PO-T2T (2:1) exciplex host was achieved with a maximum EQE of 21.1 %, which remained 20.6 % at 100 cd/m2 and 18.4 % at 1000 cd/m2, demonstrating high EQE and low efficiency roll-off.
机构:
Henan International Joint Laboratory of MXene Materials Microstructure, College of Physics and Electronic Engineering, Nanyang Normal University, NanyangHenan International Joint Laboratory of MXene Materials Microstructure, College of Physics and Electronic Engineering, Nanyang Normal University, Nanyang
Yu R.-M.
Pu C.-Y.
论文数: 0引用数: 0
h-index: 0
机构:
Henan International Joint Laboratory of MXene Materials Microstructure, College of Physics and Electronic Engineering, Nanyang Normal University, NanyangHenan International Joint Laboratory of MXene Materials Microstructure, College of Physics and Electronic Engineering, Nanyang Normal University, Nanyang
Pu C.-Y.
Yin F.-R.
论文数: 0引用数: 0
h-index: 0
机构:
Henan International Joint Laboratory of MXene Materials Microstructure, College of Physics and Electronic Engineering, Nanyang Normal University, NanyangHenan International Joint Laboratory of MXene Materials Microstructure, College of Physics and Electronic Engineering, Nanyang Normal University, Nanyang
Yin F.-R.
Ji W.-Y.
论文数: 0引用数: 0
h-index: 0
机构:
College of Physics, Jilin University, ChangchunHenan International Joint Laboratory of MXene Materials Microstructure, College of Physics and Electronic Engineering, Nanyang Normal University, Nanyang
机构:
Chinese Acad Sci, Key Lab Excited State Proc, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Peoples R China
Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R ChinaChinese Acad Sci, Key Lab Excited State Proc, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Peoples R China
Su, Zisheng
Li, Wenlian
论文数: 0引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Key Lab Excited State Proc, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Peoples R ChinaChinese Acad Sci, Key Lab Excited State Proc, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Peoples R China
Li, Wenlian
Chu, Bei
论文数: 0引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Key Lab Excited State Proc, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Peoples R ChinaChinese Acad Sci, Key Lab Excited State Proc, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Peoples R China
Chu, Bei
Wu, Shuanghong
论文数: 0引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Key Lab Excited State Proc, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Peoples R China
Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R ChinaChinese Acad Sci, Key Lab Excited State Proc, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Peoples R China
机构:
Jihua Lab, Foshan 528000, Peoples R China
Jilin Univ, State Key Lab Supramol Struct & Mat, Changchun 130012, Peoples R ChinaJihua Lab, Foshan 528000, Peoples R China
Nie, Yufang
Jiang, Chao
论文数: 0引用数: 0
h-index: 0
机构:
Jihua Lab, Foshan 528000, Peoples R ChinaJihua Lab, Foshan 528000, Peoples R China
Jiang, Chao
Cao, Chi
论文数: 0引用数: 0
h-index: 0
机构:
Jihua Lab, Foshan 528000, Peoples R ChinaJihua Lab, Foshan 528000, Peoples R China
Cao, Chi
Liang, Baoyan
论文数: 0引用数: 0
h-index: 0
机构:
Jihua Lab, Foshan 528000, Peoples R ChinaJihua Lab, Foshan 528000, Peoples R China
Liang, Baoyan
Zhuang, Xuming
论文数: 0引用数: 0
h-index: 0
机构:
Jihua Lab, Foshan 528000, Peoples R ChinaJihua Lab, Foshan 528000, Peoples R China
Zhuang, Xuming
Bi, Hai
论文数: 0引用数: 0
h-index: 0
机构:
Jihua Lab, Foshan 528000, Peoples R ChinaJihua Lab, Foshan 528000, Peoples R China
Bi, Hai
Wang, Yue
论文数: 0引用数: 0
h-index: 0
机构:
Jihua Lab, Foshan 528000, Peoples R China
Jilin Univ, State Key Lab Supramol Struct & Mat, Changchun 130012, Peoples R China
Jihua Hengye Foshan Elect Mat Co Ltd, Foshan 528000, Peoples R ChinaJihua Lab, Foshan 528000, Peoples R China