Study on ethanel gas sensing properties of Sn-doped ZnO thick film

被引:0
|
作者
Zhang, Pei-Shuo [1 ]
Pan, Guo-Feng [1 ]
Zhen, Jia-Li [1 ]
Zhang, Bing-Qiang [1 ]
机构
[1] Institute of Microelectronic, Hebei University of Technology, Tianjin 300130, China
关键词
Crystal structure - Scanning electron microscopy - II-VI semiconductors - Particle size analysis - Precipitation (chemical) - X ray diffraction - Gas sensing electrodes - Semiconductor doping - Zinc sulfide - Gas detectors - Chemical detection - Chemical sensors - Particle size - Surface topography - Tin compounds - Topography - Zinc oxide;
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摘要
Pure ZnO and 5at%, 7at%, 9at% Sn-doped ZnO precursors were prepared by the chemical co-precipitation method. Different Sn-doped ZnO powers were obtained by annealing. The crystal structure and surface topography of different samples were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Gas sensors were prepared by dip coating method. The sensing properties were tested. The results show that the Sn-doped ZnO materials appear rough porous structures with the hexagonal wurtzite. The particle size distribution was uniform. The maximum sensitivity could be achieved by doping the amount of 7at%. It has much better sensing performance towards ethanol vapor under visible light irradiation. The response and recovery time were 1 s and 5 s, respectively. The sensitivity is 400. The mechanism for the improvement in the sensing properties could be explained with the surface adsorption theory and the photoactivation theory.
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页码:2541 / 2547
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