Investigation on buffer layer for InN growth by molecular beam epitaxy

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作者：
National Institute for Materials Science, 1-1, Namiki, Tsukuba, Ibaraki 305-0044, Japan [1 ]
不详 [2 ]
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来源：
J Ceram Soc Jpn | / 1374卷 / 152-156期
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摘要：
Molecular beam epitaxy
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