Ferroelectric and dielectric behavior of heterolayered PZT thin films

被引：0
|
作者：
Kartawidjaja, F.C. [1 ]
Sim, C.H. [1 ]
Wang, J. [1 ]
机构：
[1] Department of Materials Science and Engineering, Faculty of Engineering, National University of Singapore, Singapore 117574, Singapore
来源：
Journal of Applied Physics | 2007年 / 102卷 / 12期
关键词：
Heterolayered Pb (Zr1-x Tix) O3 thin films consisting of different numbers of alternating Pb (Zr0.7 Ti0.3) O3 and Pb (Zr0.3 Ti0.7) O3 layers are studied. They exhibit (001) (100) preferred orientation and dense microstructure when baked at 500 °C and then thermally annealed at 650 °C. They demonstrate a considerably low leakage current density in the order of 10-7 A cm2. Their ferroelectric and dielectric properties are improved with increasing number of alternating Pb (Zr0.7 Ti0.3) O3 and Pb (Zr0.3 Ti0.7) O3 layers; thereby the six-heterolayered PZT thin film shows a much enhanced remanent polarization of 41.3 μC cm2 and relative permittivity of 710 at 1 kHz. In fatigue test; a wake-up phenomenon is observed with the heterolayered films; where the degradation in switchable polarization is delayed. At elevated temperatures; the wake-up phenomenon was reduced; leading to fatigue degradation at a relatively lower number of switching cycles. The phenomenon is related to the injected electron causing oxygen vacancies; the accumulation of which impedes the domain switching. © 2007 American Institute of Physics;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [21] Irradiation behavior and recovery effect of ferroelectric properties of PZT thin films*
    Zhao, Yu
    Zhao, Wen-Yue
    Ju, Dan-Dan
    Yao, Yue-Yue
    Wang, Hao
    Sun, Cheng-Yue
    Peng, Ya-Zhou
    Wu, Yi-Yong
    Fei, Wei-Dong
    CHINESE PHYSICS B, 2021, 30 (10)
  • [22] Irradiation behavior and recovery effect of ferroelectric properties of PZT thin films
    赵瑜
    赵文悦
    琚丹丹
    姚月月
    王豪
    孙承月
    彭亚洲
    吴宜勇
    费维栋
    Chinese Physics B, 2021, 30 (10) : 668 - 673
  • [23] Thin films of relaxor ferroelectric/antiferroelectric heterolayered structure for energy storage
    Nguyen, Minh D.
    Rijnders, Guus
    THIN SOLID FILMS, 2018, 659 : 89 - 93
  • [24] Determination of the nanoscale dielectric properties in ferroelectric lead zirconate titanate (PZT) thin films
    Franke, K.
    Eng, L. M.
    SURFACE SCIENCE, 2006, 600 (21) : 4896 - 4908
  • [25] Mobile defect contribution to the dielectric non-linearity of PZT ferroelectric thin films
    Goltsman, BM
    Yarmarkin, VK
    Lemanov, VV
    INTEGRATED FERROELECTRICS, 2001, 32 (1-4) : 995 - 1000
  • [26] Ferroelectric PZT thin films for photovoltaic application
    Gupta, Reema
    Gupta, Vinay
    Tomar, Monika
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2020, 105 (105)
  • [27] Influence of non-perovskite phases on ferroelectric and dielectric behavior of electron-beam deposited PZT thin films
    Darvish, SR
    Rastogi, AC
    Bhatnagar, PK
    THIN SOLID FILMS, 1999, 346 (1-2) : 108 - 115
  • [28] Structural and ferroelectric characterization of PZT thin films
    Yang, Y
    Chen, ZM
    Zhao, GY
    Zhang, WH
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2002, 16 (28-29): : 4460 - 4464
  • [29] Influence of non-perovskite phases on ferroelectric and dielectric behavior of electron-beam deposited PZT thin films
    Materials Division, National Physical Laboratory, New Delhi -110012, India
    不详
    Thin Solid Films, 1 (108-115):
  • [30] Dielectric behavior of ferroelectric thin films grown on orthorhombic substrates
    Liu, P. F.
    Qiu, J. H.
    Jiang, Q.
    PHYSICS LETTERS A, 2006, 357 (06) : 485 - 490
12345