An interatomic potential model for molecular dynamics simulation of silicon etching by Br+ -containing plasmas

被引：0
|
作者：
Ohta, H. [1 ,2 ]
Iwakawa, A. [1 ]
Eriguchi, K. [1 ]
Ono, K. [1 ]
机构：
[1] Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan
[2] Materials Department, University of California, Santa Barbara, CA 93106, United States
来源：
Journal of Applied Physics | 2008年 / 104卷 / 07期
关键词：
31;
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摘要：
Journal article (JA)
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