Investigation on the in-situ spectroscopic ellipsometry of GaN films grown on sapphire substrates by molecular beam epitaxy

被引：0
|
作者：
Yuan, Jinshe [1 ]
Liu, Yingdan [1 ]
Pan, Defang [1 ]
机构：
[1] Key Laboratory of Optical Engineering, Department of Physics and Information Technology, Chongqing Normal University, Chongqing 400047, China
来源：
Zhongguo Jiguang/Chinese Journal of Lasers | 2009年 / 36卷 / SUPPL. 2期
关键词：
D O I：
10.3788/CJL200936s2.0378
中图分类号：
学科分类号：
摘要：
引用
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页码：378 / 381
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