Hydrogen Sulfide-Based Double-Gate Single-Electron Transistor for Charge Detection and Switching Applications

The electrostatic behavior of a hydrogen sulfide (H2S)-based double-gate (DG) single-electron transistor (SET) for the charge detection of toxic H2S gas has been investigated and its potential for switching applications with different orientations of H2S quantum dot explored. The electronic properties of the SET operating in the coulomb blockage region have been analyzed using advanced modeling techniques like density functional theory (DFT) and non-equilibrium Green's function formalism, implemented in the QuantumWise-ATK. Through simulations, the charging energies of H2S molecules within the SET environment have been calculated, and the plot of total energy with gate voltage developed, which serves as a basis to generate the charge stability diagram. This diagram illustrates the nature of electron conduction in different charge states, which act as unique electronic fingerprints for the identification of H2S gas in different orientations. Moreover, it is observed that operating this SET model under negative gate bias is more energetically efficient than under positive bias.