Magnetoresistance of a nonstationary magnetic tunnel junction

被引：0
|
作者：
Abdulkadyrov D.V. [1 ]
Beletskii N.N. [1 ]
机构：
[1] A. Usikov Institute of Radio Physics and Electronics, National Academy of Sciences of Ukraine 12, Kharkiv 61085, Academician Proskura St.
来源：
Telecommunications and Radio Engineering (English translation of Elektrosvyaz and Radiotekhnika) | 2010年 / 69卷 / 20期
关键词：
High-frequency current; Non-stationary magneto junction; Tunneling electrons;
D O I：
10.1615/TelecomRadEng.v69.i20.70
中图分类号：
学科分类号：
摘要：
Electron tunneling through a non-stationary magnetic tunnel junction as an approximation of a low-amplitude alternating electric field has been investigated. Dependences of active andpassive components of a high-frequency tunneling magnetoresistance through a magnetic junction on the frequency and the applied constant bias voltage have been studied. © 2010 by Begell House, Inc.
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收藏
页码：1837 / 1849
页数：12
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