Structure analysis of self-assembled ErSi2nanowires formed on Si(110) substrates

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作者：

Department of Physics, Tokyo University of Science, 1-3 Kagurazaka, Sinjuku-ku, Tokyo 162-8601, Japan ^{[1
]}

不详 ^{[2
]}

不详 ^{[3
]}

不详 ^{[4
]}

机构：

来源：

IEEJ Trans. Electron. Inf. Syst. | 2007年 / 9卷 / 1294-1297+1期

关键词：

Annealing - Erbium compounds - Evaporation - Growth (materials) - Molecular structure - Self assembled monolayers - Surface morphology;

D O I：

10.1541/ieejeiss.127.1294

中图分类号：

学科分类号：

摘要：

The ErSi2nanowires were formed on Si (110) substrates by a self-assembled growth process without a high vacuum system. All of the nanowires were highly parallel and along the Si [1-10] direction. It was shown by structural analysis that the nanowires consisted of two types, which showed a similar surface morphology. The first type is ErSi2 nanowires buried into the Si substrate by a depth of 30nm, and the other is ErSi2thin layers covering on wire-like Si surface. The later is suggested to be the remained structure after evaporation of the first type wires during the high temperature annealing.

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