This study used microwave irradiation technique to synthesize a sequence of Bi2MoO6@g-C3N4 nanocomposite as photocatalysts. The two narrow band gap nanomaterials used were g-C3N4 and Bi2MoO6. The nanocomposites were thoroughly characterized by XRD, FESEM, EDS, HRTEM, Raman spectroscopy, UV-visible spectra, PL and XPS. Moreover, using sunlight radiation, two distinct dyes including Malachite Green (MG) and Acid Blue 113 (AB 113) were degraded using as synthesized photocatalyst. The outcomes indicated that the photocatalytic degradation efficiency of Bi2MoO6@ g-C3N4 was higher than that of pure g-C3N4. A 95 % degradation efficiency towards Malachite Green and an 84 % degradation efficiency towards Acid Blue 113 shown the great effectiveness of Bi2MoO6@ g-C3N4. This enhanced efficiency is attributed to the increased visible light absorption, effective charge separation due to the heterojunction interface between Bi2MoO6 and g-C3N4, and the increased surface area facilitating greater active site availability. According to these results, the synthesized Bi2MoO6@ gC3N4 would be very beneficial for the removal of organic contaminants in a variety of industrial environments.
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Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R ChinaZhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
Shen, Jianchao
Yang, Hui
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Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R ChinaZhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
Yang, Hui
Shen, Qianhong
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Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
Zhejiang Univ, Zhejiang California Int NanoSyst Inst, Hangzhou 310027, Zhejiang, Peoples R ChinaZhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
Shen, Qianhong
Feng, Yu
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Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R ChinaZhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
Feng, Yu
Cai, Qifeng
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Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R ChinaZhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
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CSIR Cent Elect Res Inst, Funct Mat Div, Karaikkudi 630003, Tamil Nadu, India
Acad Sci & Innovat Res AcSIR, Ghaziabad 201002, IndiaCSIR Cent Elect Res Inst, Funct Mat Div, Karaikkudi 630003, Tamil Nadu, India
Karnan, M.
Sathish, M.
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CSIR Cent Elect Res Inst, Funct Mat Div, Karaikkudi 630003, Tamil Nadu, India
Acad Sci & Innovat Res AcSIR, Ghaziabad 201002, IndiaCSIR Cent Elect Res Inst, Funct Mat Div, Karaikkudi 630003, Tamil Nadu, India
Sathish, M.
Pandikumar, A.
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CSIR Cent Elect Res Inst, Funct Mat Div, Karaikkudi 630003, Tamil Nadu, India
Acad Sci & Innovat Res AcSIR, Ghaziabad 201002, IndiaCSIR Cent Elect Res Inst, Funct Mat Div, Karaikkudi 630003, Tamil Nadu, India