Simulation of an optimal design for (P)-a-Si:H/(N)-c-Si photovoltaic converters using the analytical model

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作者：
Kharkiv National University of Radio Engineering and Electronics, 14, Lenin Ave, Kharkiv [1 ]
61166, Ukraine
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来源：
Telecommun Radio Eng | / 13卷 / 1215-1223期
关键词：
Analytical models - Heterojunctions - Structural optimization;
D O I：
10.1615/TelecomRadEng.v74.i13.80
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摘要：
The analytical model of a-Si:H/c-Si heterojunction, based on diffusion mechanism of electrons and holes transfer, is used to calculate its electrical characteristics in the presence of sunlight. Computer simulation has been carried out to obtain the optimal structure of transition layers. The presented analytical expressions make it possible to take into account the influence of construction and technology factors on photocell current-voltage characteristic and main parameters. © 2015 by Begell House, Inc.
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