Simulation of an optimal design for (P)-a-Si:H/(N)-c-Si photovoltaic converters using the analytical model

被引：0

作者：

Kharkiv National University of Radio Engineering and Electronics, 14, Lenin Ave, Kharkiv ^{[1
]}

61166, Ukraine

机构：

来源：

Telecommun Radio Eng | / 13卷 / 1215-1223期

关键词：

Analytical models - Heterojunctions - Structural optimization;

D O I：

10.1615/TelecomRadEng.v74.i13.80

中图分类号：

学科分类号：

摘要：

The analytical model of a-Si:H/c-Si heterojunction, based on diffusion mechanism of electrons and holes transfer, is used to calculate its electrical characteristics in the presence of sunlight. Computer simulation has been carried out to obtain the optimal structure of transition layers. The presented analytical expressions make it possible to take into account the influence of construction and technology factors on photocell current-voltage characteristic and main parameters. © 2015 by Begell House, Inc.

引用

共 50 条

[1] Study of the photoinduced degradation of tandem photovoltaic converters based on a-Si:H/μc-Si:H
A. S. Abramov
D. A. Andronikov
K. V. Emtsev
A. V. Kukin
A. V. Semenov
E. E. Terukova
A. S. Titov
S. A. Yakovlev
Semiconductors, 2016, 50 : 1074 - 1078
[2] Distance-dependent lateral photovoltaic effect in a-Si:H(p)/a-Si:H(i)/c-Si(n) structure
Qiao, Shuang
Chen, Jianhui
Liu, Jihong
Fu, Nian
Yan, Guoying
Wang, Shufang
APPLIED SURFACE SCIENCE, 2015, 356 : 732 - 736
[3] Study of the photoinduced degradation of tandem photovoltaic converters based on a-Si:H/μc-Si:H
Abramov, A. S.
Andronikov, D. A.
Emtsev, K. V.
Kukin, A. V.
Semenov, A. V.
Terukova, E. E.
Titov, A. S.
Yakovlev, S. A.
SEMICONDUCTORS, 2016, 50 (08) : 1074 - 1078
[4] Investigation of an a-Si/c-Si interface on a c-Si(P) substrate by simulation
汪建强
高华
张剑
孟凡英
叶庆好
半导体学报, 2012, 33 (03) : 8 - 14
[5] Investigation of an a-Si/c-Si interface on a c-Si(P) substrate by simulation
Wang Jianqiang
Gao Hu
Zhang Jian
Meng Fanying
Ye Qinghao
JOURNAL OF SEMICONDUCTORS, 2012, 33 (03)
[6] Electrical characterization of a-Si:H(n)/c-Si(p) structure
Kavasoglu, A. Sertap
Birgi, Ozcan
Kavasoglu, Nese
Oylumluoglu, Gorkem
Kodolbas, A. Osman
Kangi, Rifat
Yilmaz, Okan
JOURNAL OF ALLOYS AND COMPOUNDS, 2011, 509 (39) : 9394 - 9398
[7] Study and Simulation of the Heterojunction Thin Film Solar Cell a-Si(n)/a-Si(i)/c-Si(p)/a-Si(i)/a-Si(p)
Zarede Toufik
Lidjici Hamza
Fathi Mohamed
Mahrane Achour
Journal of Electronic Materials, 2016, 45 : 3943 - 3948
[8] Study and Simulation of the Heterojunction Thin Film Solar Cell a-Si(n)/a-Si(i)/c-Si(p)/a-Si(i)/a-Si(p)
Toufik, Zarede
Hamza, Lidjici
Mohamed, Fathi
Achour, Mahrane
JOURNAL OF ELECTRONIC MATERIALS, 2016, 45 (08) : 3943 - 3948
[9] Improvement of parameters in a-Si(p)/c-Si(n)/a-Si(n) solar cells
Bouzaki, Mohammed Moustafa
Aillerie, Michel
Hamady, Sidi Ould Saad
Chadel, Meriem
Benyoucef, Boumediene
MATERIALS RESEARCH EXPRESS, 2016, 3 (10):
[10] Recombination at a-Si:H/c-Si heterointerfaces and in a-Si:H/c-Si heterojunction solar cells
Rau, U
Nguyen, VX
Mattheis, J
Rakhlin, M
Werner, JH
PROCEEDINGS OF 3RD WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS A-C, 2003, : 1124 - 1127

← 1 2 3 4 5 →