A three-conductor transmission line model for MOS transistors

被引：0
|
作者：
Electrical Engineering Department, Institute of Communications Technology and Applied Electromagnetics Micro/mm-wave, Wireless Comm. Research Lab, Amirkabir University of Technology, Tehran [1 ]
15914, Iran
机构：
来源：
Appl Comput Electromagn Soc J | / 6卷 / 670-676期
关键词：
CMOS technology - Commercial simulators - Current-voltage equations - Distributed analysis - Finite difference time domain technique - MOSFET modeling - Small signal model - Transmission line modeling;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
An accurate high frequency small signal model for MOS transistors is presented. In the proposed model, by considering the layout of the MOS transistor, it is considered as a three-conductor transmission line. Then, a set of current-voltage equations are derived for the structure using the transmission line theory. These coupled equations are solved by the Finite-Difference Time-Domain (FDTD) technique in a marching-in-time process. To verify the model, the scattering parameters of a 0.13 μm transistor are extracted from the time domain results over the 1-100 GHz frequency band and compared with the results obtained from the available models and commercial simulator. The suggested model can be useful in design of various types of high frequency integrated circuits.
引用
收藏
相关论文
共 50 条
  • [31] Comparison of zeroth-order and harmonic expansion calculation of the electrostatic parameters of three-conductor bundles
    Brandao Faria, J. A.
    Malo Machado, V.
    Van Dommelen, D.
    ELECTRIC POWER SYSTEMS RESEARCH, 2011, 81 (02) : 488 - 494
  • [32] A MODEL FOR MOS-TRANSISTORS
    BHATTI, GS
    JONES, BK
    RUSSELL, PC
    IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1985, 132 (06): : 248 - 252
  • [33] Verification of Novel Extended Mixed-Mode S-Parameters on Three-Conductor Lines
    Zhang, Nan
    Nah, Wansoo
    2015 IEEE INTERNATIONAL SYMPOSIUM ON ELECTROMAGNETIC COMPATIBILITY (EMC), 2015, : 1319 - 1322
  • [34] Analysis of Three-Conductor Coupled-Line 180° Hybrid for Single-Balanced Subharmonic Mixer Design in 0.15-μm pHEMT Technology
    Su, Chun-Chi
    Lin, Chih-Ming
    Hung, Shih-Han
    Huang, Chia-Chen
    Wang, Yeong-Her
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2014, 62 (10) : 2405 - 2414
  • [35] Single-Conductor Transmission-Line Model for Bent Wire Structures
    Tashiro, Daiki
    Sameshima, Kana
    Hisakado, Takashi
    Islam, A. K. M. Mahfuzul
    Wada, Osami
    IEEE TRANSACTIONS ON ELECTROMAGNETIC COMPATIBILITY, 2023, 65 (05) : 1432 - 1445
  • [36] Simplified Vibration Model and analysis of a single-conductor transmission line with dampers
    Barry, O.
    Long, R.
    Oguamanam, D. C. D.
    PROCEEDINGS OF THE INSTITUTION OF MECHANICAL ENGINEERS PART C-JOURNAL OF MECHANICAL ENGINEERING SCIENCE, 2017, 231 (22) : 4150 - 4162
  • [37] Application of an Improved Multi-Conductor Transmission Line Model in Power Transformer
    Zhang, Qiuhui
    Wang, Shuhong
    Qiu, Jie
    Jing, Xuelong
    Gao, Chuang
    Zhu, Jian Guo
    Guo, Youguang
    IEEE TRANSACTIONS ON MAGNETICS, 2013, 49 (05) : 2029 - 2032
  • [38] Single-Conductor Transmission-Line Model of Multiwall Carbon Nanotubes
    Sarto, Maria Sabrina
    Tamburrano, Alessio
    IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2010, 9 (01) : 82 - 92
  • [39] Two Compact Power-Combining CMOS VCOs With Excellent 2nd-Harmonic Rejection Using Three-Conductor Coupled-Line
    Chang, Ren-Hua
    Wang, Sen
    Teng, Cheng-Chieh
    2015 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2015,
  • [40] Modified Transmission Line Model for Bottom-Contact Organic Transistors
    Wang, Wei
    Li, Ling
    Ji, Zhuoyu
    Ye, Tianchun
    Lu, Nianduan
    Li, Zhigang
    Li, Dongmei
    Liu, Ming
    IEEE ELECTRON DEVICE LETTERS, 2013, 34 (10) : 1301 - 1303
12345