A three-conductor transmission line model for MOS transistors

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作者：
Electrical Engineering Department, Institute of Communications Technology and Applied Electromagnetics Micro/mm-wave, Wireless Comm. Research Lab, Amirkabir University of Technology, Tehran [1 ]
15914, Iran
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来源：
Appl Comput Electromagn Soc J | / 6卷 / 670-676期
关键词：
CMOS technology - Commercial simulators - Current-voltage equations - Distributed analysis - Finite difference time domain technique - MOSFET modeling - Small signal model - Transmission line modeling;
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摘要：
An accurate high frequency small signal model for MOS transistors is presented. In the proposed model, by considering the layout of the MOS transistor, it is considered as a three-conductor transmission line. Then, a set of current-voltage equations are derived for the structure using the transmission line theory. These coupled equations are solved by the Finite-Difference Time-Domain (FDTD) technique in a marching-in-time process. To verify the model, the scattering parameters of a 0.13 μm transistor are extracted from the time domain results over the 1-100 GHz frequency band and compared with the results obtained from the available models and commercial simulator. The suggested model can be useful in design of various types of high frequency integrated circuits.
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