Extraction of drain current and effective mobility in epitaxial graphene channel field-effect transistors on SiC layer grown on silicon substrates

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Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-Ku, Sendai 980-8577, Japan ^{[1
]}

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]}

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来源：

Jpn. J. Appl. Phys. | / 4 PART 2卷

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04DF17

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摘要：

Graphene transistors - Leakage currents - Silicon - Substrates - Thermolysis - Drain current - Graphene - Field effect transistors

引用

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