High efficiency Cu(In, Ga)Se2 thin-film solar cells doped Na on polyimide substrate

被引：0

作者：

Jiang, Wei-Long ^{[1
]}

Zhang, Li ^{[1
]}

He, Qing ^{[1
]}

Liu, Wei ^{[1
]}

Yu, Tao ^{[1
]}

Pang, Jin-Bo ^{[1
]}

Li, Feng-Yan ^{[1
]}

Li, Chang-Jian ^{[1
]}

Sun, Yun ^{[1
]}

机构：

[1] Tianjin Key Laboratory for Photoelectronic Thin Film Devices and Technology, Institute of Photoelectronic Thin Film Device and Technology, Nankai University, Tianjin 300071, China

来源：

Guangdianzi Jiguang/Journal of Optoelectronics Laser | 2010年 / 21卷 / 02期

关键词：

Thin films - Polyimides - Sodium - Selenium compounds - Temperature - Thin film solar cells - Conversion efficiency;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The effects of Na incorporation on the structural and electrical properties of Cu(In, Ga)Se2(CIGS) thin films on polyimide(PI) substrate by low-temperature process are investigated. As shown by XRD, the diffusion of Ga is hindered by Na, the Na incorporation has no influence on the grain size of CIGS thin films. The device performances of solar cells based on CIGS thin films on PI with Na incorporation are remarkably improved due to the improvement of electrical properties of CIGS. The mechanism is that Na increases the carrier concentration and reduces the resistivity. A high conversion efficiency of 10.4% has been achieved on PI substrate by improving the Na incorporation process at the substrate temperature of 450 °C.

引用

页码：222 / 226

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