Luminescence properties of β-Ga2O3:Bi single crystals growth by the optical floating zone method

beta-Ga2O3, an advanced semiconductor optical material, exhibits remarkable luminescence properties through doping. In this study, beta-Ga2O3:Bi single crystals were successfully grown using the optical floating zone method, and their luminescence mechanisms were investigated. Our results demonstrate that reducing the sintering temperature to 1000 degrees C enhances the incorporation of Bi into the crystal matrix. Temperature-dependent spectral analysis reveals the non-radiative transitions in the blue light region, contributing to fast luminescence dynamics. These findings deepen our understanding of the luminescence characteristics of beta-Ga2O3 single crystals and provide valuable insights for potential applications in radiation detection.