Luminescence properties of β-Ga2O3:Bi single crystals growth by the optical floating zone method

被引：1

作者：

Yang, Xiaolong ^{[1
]}

Tang, Huili ^{[1
]}

Zhang, Chaoyi ^{[1
]}

Li, Xianke ^{[1
]}

Wang, Wudi ^{[1
]}

Huang, Xiaobo ^{[1
]}

Peng, Xiaotong ^{[1
]}

Zhang, Chenbo ^{[1
]}

Xu, Jun ^{[1
]}

Liu, Bo ^{[1
]}

机构：

[1] Tongji Univ, Sch Phys Sci & Engn, Key Lab Adv Microstruct Mat, MOE, Shanghai 200092, Peoples R China

来源：

JOURNAL OF LUMINESCENCE | 2025年 / 278卷

基金：

中国国家自然科学基金;

关键词：

beta-Ga2O3 :Bi single crystals; Luminescence properties; Optical floating zone method; SCINTILLATION; OXIDE;

D O I：

10.1016/j.jlumin.2024.121002

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

beta-Ga2O3, an advanced semiconductor optical material, exhibits remarkable luminescence properties through doping. In this study, beta-Ga2O3:Bi single crystals were successfully grown using the optical floating zone method, and their luminescence mechanisms were investigated. Our results demonstrate that reducing the sintering temperature to 1000 degrees C enhances the incorporation of Bi into the crystal matrix. Temperature-dependent spectral analysis reveals the non-radiative transitions in the blue light region, contributing to fast luminescence dynamics. These findings deepen our understanding of the luminescence characteristics of beta-Ga2O3 single crystals and provide valuable insights for potential applications in radiation detection.

引用

页数：9

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