In Situ scanning tunneling microscope observation of InAs wetting layer formation on GaAs(001) during molecular beam epitaxy growth at 500°C

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作者：
Honma, Tsuyoshi [1 ,2 ,3 ]
Tsukamoto, Shiro [1 ]
Arakawa, Yasuhiko [1 ]
机构：
[1] Nanoelectronics Collaborative Research Center, IIS, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
[2] Advanced Technology R and D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchihonmachi, Amagasaki, Hyogo 661-8661, Japan
[3] Department of Materials Science and Technology, Nagaoka University of Technology, Nagaoka 940-2188, Japan
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 2006年 / 45卷 / 29-32期
关键词：
The evolution of InAs wetting layer growth on GaAs(001) was observed at 500°C using scanning tunneling microscope within a molecular beam epitaxy growth chamber. In a series of island nucleation and step flow growth of InAs are clearly observed in the same region with each snapshot. The step density was increased with increasing of InAs growth due to island nucleation and recovered within one monolayer (ML) growth with coalescent with two-dimensional islands. Actual step flow growth was stopped beyond 1 ML and then InAs quantum dots (QDs) were appeared at 1.72 ML. It is found that the excess amount of 3.9 × 1014 cm-2 In adatom independent from chemical bonding might be participate the formation of QDs induced with drastically around 1.7 ML. © 2006 The Japan Society of Applied Physics;
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