Electrical triggering of metal-insulator transition in nanoscale vanadium oxide junctions

被引：0
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作者：
Ruzmetov, Dmitry [1 ]
Gopalakrishnan, Gokul [1 ]
Deng, Jiangdong [2 ]
Narayanamurti, Venkatesh [1 ]
Ramanathan, Shriram [1 ]
机构：
[1] Harvard School of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138, United States
[2] Center for Nanoscale Systems, Harvard University, Cambridge, MA 02138, United States
来源：
Journal of Applied Physics | 2009年 / 106卷 / 08期
关键词：
200 nm diameter Au contacts were fabricated by e-beam lithography on sputtered thin film vanadium oxide grown on conducting substrates and current perpendicular to plane electron transport measurements were performed with a conducting tip atomic force microscope. Sharp jumps in electric current were observed in the I-V characteristics of the nano- VO2 junctions and were attributed to the manifestation of the metal-insulator transition. The critical field and dielectric constant were estimated from quantitative analysis of the current-voltage relationship and compared with reported values on micrometer and larger size scale devices. These results are of potential relevance to novel oxide electronics utilizing metal-insulator transitions. © 2009 American Institute of Physics;
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