Synthesis of porous Mg2MnO4 spinel microspheres and enhanced lithium storage properties

被引:0
|
作者
Li, Chao [1 ]
Wang, Zhenyan [1 ]
Jiang, Huatong [1 ]
Yang, Shengxuan [1 ]
Cai, Dongxiao [1 ]
Li, Bo [1 ]
Duan, Xiulan [1 ]
Yu, Fapeng [1 ]
机构
[1] Shandong Univ, Inst Crystal Mat, State Key Lab Crystal Mat, Jinan 250100, Peoples R China
关键词
Mg2MnO4; spinel; Porous microspheres; Anode material; Li-ion batteries; ELECTROCHEMICAL PERFORMANCE; CATHODE MATERIALS; OXYGEN VACANCY; ANODE MATERIAL; ION; MGCO2O4;
D O I
10.1016/j.jpcs.2024.112328
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Porous Mg2MnO4 spinel microspheres were synthesized by a facile solvothermal method. Various techniques such as X-ray powder diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, were used to characterize the phase composition, morphology and electronic structure of materials. The results show that Mg2MnO4 spinel material was obtained at the temperature of 600-800 degrees C and has a microsphere structure. The microspheres were assembled by nanoparticles, and the particle size increases with the increase of annealing temperature. Analyses of XPS spectra reveal that Mn exists in multiple valence states (+2, +3, +4) in Mg2MnO4 materials, and all the materials are mixed spinel with Mg2+ and Mn2+/3+/4+ ions occupy both tetrahedral and octahedral sites of spinel structure, and the degree of inversion decreases with increasing annealing temperature. Mg2MnO4 microspheres exhibit excellent lithium storage performance, the first discharge specific capacity of M2MO-8 is 835.3 mAh g(-1) under a voltage window of 0-3 V and with a current density of 100 mA g(-1), and after 100 cycles the discharge capacity of the material is as high as 406.5 mAh g(-1). In addition, this material shows high cyclic reversibility. The enhanced lithium storage properties of the material can be attributed to its porous structure, which promote the transport of lithium ions and reduce the damage to the structure caused by the volume change during the charge and discharge process.
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页数:9
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