Effect of the Schottky barrier height on the detection of midgap levels in 4H-SiC by deep level transient spectroscopy

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作者：
Reshanov, S.A. [1 ]
Pensl, G. [1 ]
Danno, K. [2 ]
Kimoto, T. [2 ]
Hishiki, S. [3 ]
Ohshima, T. [3 ]
Itoh, H. [3 ]
Yan, Fei [4 ]
Devaty, R.P. [4 ]
Choyke, W.J. [4 ]
机构：
[1] Institute of Condensed Matter Physics, University of Erlangen-Nürnberg, Staudtstrasse 7, 91058 Erlangen, Germany
[2] Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo, Kyoto 615-8510, Japan
[3] Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan
[4] Department of Physics, University of Pittsburgh, Pittsburgh, PA 15260, United States
来源：
Journal of Applied Physics | 2007年 / 102卷 / 11期
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