Reactive Ion Etching Challenges and Technology for Memory Device Fabrication

被引：0
|
作者：
Tahara, S. [1 ]
机构：
[1] Tokyo Electron Miyagi Ltd., Taiwa-cho, Miyagi,981-3629, Japan
来源：
2023 International Conference on Electronics Packaging, ICEP 2023 | 2023年
关键词：
Compilation and indexing terms; Copyright 2024 Elsevier Inc;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Aspect ratio - Atomic layer deposition - Fabrication - NAND circuits - Three dimensional integrated circuits
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页码：33 / 34
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