Valleytronics and negative differential resistance in cubic boron nitride: A first-principles study

被引：0
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作者：
Hatanpää, Benjamin [1 ]
Minnich, Austin J. [1 ]
机构：
[1] Division of Engineering and Applied Science, California Institute of Technology, Pasadena,CA, United States
来源：
Physical Review Materials | 2024年 / 8卷 / 10期
基金：
美国国家航空航天局;
关键词：
Boron nitride - Carrier transport - Charge transfer devices - Electric breakdown of liquids - Electric breakdown of solids - Gallium phosphide - Indium phosphide - Semiconducting gallium compounds - Surface discharges;
D O I：
10.1103/PhysRevMaterials.8.104602
中图分类号：
学科分类号：
摘要：
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