Surface treatment processed electron transport layers for efficient Sb2S3 solar cells

被引：0
|
作者：
Hou, Sanyuan [1 ,2 ,3 ]
Zhang, Xiaokun [2 ,3 ]
Dai, Guohao [1 ]
Wang, Xiaomin [1 ]
Wang, Haolin [4 ]
Chen, Tao [4 ]
Wang, Kefan [3 ]
Xiao, Xudong [2 ]
Li, Jianmin [2 ]
机构：
[1] Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan,430205, China
[2] Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan,430072, China
[3] Henan Province Key Laboratory of Photovoltaic Materials, Henan University, Kaifeng,475004, China
[4] School of Chemistry and Materials Science, University of Science and Technology of China, Hefei,230026, China
来源：
Chemical Engineering Journal | 1600年 / 500卷
基金：
中国国家自然科学基金;
关键词：
Solution-processed Sb2S3 thin films and solar cell devices have recently gained popularity due to their easy procedure and outstanding final device performance. Nevertheless; although the substrate has a significant influence on the following functional films; the effect of the substrate in the Sb-based solar cells appears to have not been adequately examined. In this study; we performed an interesting thioacetamide (TA)-assisted surface treatment strategy on the electron transport layer (ETL) to achieve high-quality development of Sb2S3 thin films and based solar devices. The surface treatment of ETLs resulted in a uniform surface; Zn(OH)2 impurity reduction; and excellent wettability. The above enhanced the growth of Sb2S3 thin films with features like extremely large crystal sizes (∼8 um); more homogeneous and dense film morphology; preferred crystal orientation; reduced oxygen content; and fewer defects; which benefits carrier transport. Finally; a device structure constructed of FTO/TiO2/Zn(O; S)/Sb2S3/Spiro/Au was created; resulting in an almost 30 % increase in efficiency; from 4.05 % to 5.21 %. The proposed approach not only gives new insights into generating higher-quality Sb2S3 thin films and devices; but it also presents new concepts and methods for future high-quality sulfide thin film preparation. © 2024 Elsevier B.V;
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