Depth profiles of hole traps in the tail region of Al ion implantation into p-type 4H-SiC

Hole traps generated in the tail region of Al ion implantation in p-type 4H-SiC were characterized by deep-level transient spectroscopy measurements. Hole traps energetically located at E-v + 0.51 eV, E-v + 0.72 eV, E-v + 0.77 eV, and E-v + 1.40 eV (E-v: energy of the valence band top) were detected. The hole trap densities were roughly 7-40 times smaller than the implanted Al atom density in the tail region, and the densities of the observed traps exponentially decreased with the decay lengths of 84-150 nm. (c) 2024 The Japan Society of Applied Physics. All rights, including for text and data mining, AI training, and similar technologies, are reserved.