Optimizing charge transport simulation for hybrid pixel detectors

被引:0
|
作者
Xie, X. [1 ]
Barten, R. [1 ]
Bergamaschi, A. [1 ]
Braham, B. [1 ]
Bruckner, M. [1 ]
Carulla, M. [1 ]
Dinapoli, R. [1 ]
Ebner, S. [1 ]
Ferjaoui, K. [1 ]
Greiffenberg, D. [1 ]
Hasanaj, S. [1 ]
Heymes, J. [1 ]
Hinger, V. [1 ]
King, T. [1 ]
Kozlowski, P. [1 ]
Lopez-Cuenca, C. [1 ]
Mezza, D. [1 ]
Moustakas, K. [1 ]
Mozzanica, A. [1 ]
Paton, K. A. [1 ]
Ruder, C. [1 ]
Schmitt, B. [1 ]
Sieberer, P. [1 ]
Thattil, D. [1 ]
Zhang, J. [1 ]
Frojdh, E. [1 ]
机构
[1] Paul Scherrer Inst, Ctr Photon Sci, Forschungsstr 111, CH-5232 Villigen, Switzerland
来源
JOURNAL OF INSTRUMENTATION | 2024年 / 19卷 / 10期
关键词
Charge transport and multiplication in solid media; Detector modelling and simulations II (electric fields; charge transport; multiplication and induction; pulse formation; electron emission; etc); ELECTRON; SILICON; PENETRATION;
D O I
10.1088/1748-0221/19/10/C10007
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
To enhance the spatial resolution of the M & Ouml;NCH 25 mu m pitch hybrid pixel detector, deep learning models have been trained using both simulation and measurement data. Challenges arise when comparing simulation-based deep learning models to measurement-based models for electrons, as the spatial resolution achieved through simulations is notably inferior to that from measurements. Discrepancies are also observed when directly comparing X-ray simulations with measurements, particularly in the spectral output of single pixels. These observations collectively suggest that current simulations require optimization. To address this, the dynamics of charge carriers within the silicon sensor have been studied using Monte Carlo simulations, aiming to refine the charge transport modeling. The simulation encompasses the initial generation of the charge cloud, charge cloud drift, charge diffusion and repulsion, and electronic noise. The simulation results were validated with measurements from the M & Ouml;NCH detector for X-rays, and the agreement between measurements and simulations was significantly improved by accounting for the charge repulsion.
引用
收藏
页数:11
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