Ultra Wideband High-Efficiency High-Power Amplifier Design by Simplified Output Matching Technique

被引：0

作者：

Cagdas, Engin ^{[1
]}

Kizilbey, Oguzhan ^{[1
,2
]}

Yazgi, Metin ^{[1
]}

机构：

[1] Istanbul Tech Univ, Elect & Elect Engn Fac, Istanbul, Turkiye

[2] TUBITAK Natl Metrol Inst, R&D Support & Informat Syst, Kocaeli, Turkiye

来源：

ELECTRICA | 2024年 / 24卷 / 03期

关键词：

Gallium Nitride (GaN) (HEMT); high power; high-efficiency power amplifier; wideband power amplifier;

D O I：

10.5152/electrica.2024.24134

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the design of a Gallium Nitride (GaN) transistor-based ultra-wideband (UWB) high-efficiency power amplifier (PA) with 25W (44 dBm) output power operating in the 2-6 GHz frequency band. The design of the matching circuits is based on a simplified systematic approach utilizing the target impedance trajectory. The Macom CGHV1F025S model GaN transistor and Rogers RT5870 model substrate are used in the design. The experimental results show that performance of the implemented PA offers 9.8 dB power gain, 43.8 dBm output power, and power-added efficiency (PAE) between 41% and 57% in the 2-6 GHz band.

引用

页码：755 / 766

页数：12

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