Characteristics of an antistatic semiconductor bridge based on micro/nano processing techniques

Regarded as a novel type of igniter, semiconductor bridge (SCB) prove superior in burst time and burst energy (less than 5 mJ). Nevertheless, SCB discharged by strong electrostatic discharge (ESD) inevitably leads to damage. To enhance the electrostatic safety of the SCB initiator, an antistatic semiconductor bridge (ASCB) initiator incorporating a transient suppression (TVS) diode was fabricated based on micro/nan processing techniques. Three sizes of polysilicon bridge (10440 mu m 2 , 17 020 mu m 2 , and 23 760 mu m 2 ) and two breakdown voltages of TVS (7.3 V and 8.6 V) were designed. Then constant discharge test and ESD test were carried out to investigate the effects of bridge area and TVS breakdown voltage on the performance of ASCB. The results showed that, the energy density of polysilicon bridge is a linear function of the ratio of the square of the current to the area of the polysilicon (ISCB2/A). The breakdown voltage will affect the shunt of TVS. During polysilicon heat accumulation process, owing to shunt of TVS, the energy applied to the polysilicon bridge reduced. In addition, the bridge with a larger area were more difficult to reach the explosive limit. Therefore, both the breakdown voltage of the TVS and the area of the polysilicon bridge influenced the explosive characteristics of the ASCB. The antistatic performance of ASCB is obviously stronger than that of SCB, and A2 (ASCB with bridge area of 23 760 mu m 2 and breakdown voltage of 7.3 V) is the strongest among the three types of ASCB. Reducing the breakdown voltage of TVS and increasing the bridge area of polysilicon can effectively improve the antistatic performance of ASCB.