Electrochemical upcycling of indium-gallium-zinc oxide scraps

被引:0
|
作者
Li, Shaolong [1 ,2 ]
Lv, Zepeng [1 ]
He, Jilin [1 ,2 ]
Song, Jianxun [1 ,2 ]
机构
[1] Zhengzhou Univ, Zhongyuan Crit Met Lab, Sci Rd 100, Zhengzhou 450001, Henan, Peoples R China
[2] Zhengzhou Univ, Sch Mat Sci & Engn, Sci Rd 100, Zhengzhou 450001, Henan, Peoples R China
基金
中国博士后科学基金;
关键词
Aqueous solution; Electrolysis; Indium-gallium-zinc oxide scraps; Solid-state; Upcycling; CARBON-PASTE ELECTRODE; RECYCLING INDIUM; VOLTAMMETRIC DETERMINATION; SOLVENT-EXTRACTION; TITANIUM-DIOXIDE; TIN; RECOVERY; SEPARATION; REDUCTION; ITO;
D O I
10.1016/j.psep.2024.10.003
中图分类号
X [环境科学、安全科学];
学科分类号
08 ; 0830 ;
摘要
At present, the processes of recovering indium-gallium-zinc oxide (IGZO) scraps through hydrometallurgy, pyrometallurgy, or molten salt electro-deoxidation are cumbersome, impurities cannot well be effectively removed, and the environmental benefits are inferior. We herein firstly propose a facile electrochemical method for upcycling of IGZO scraps in ammonium salt aqueous solution at ambient temperature. The feasibility of electrodeoxidation of IGZO in aqueous solution has been verified, using IGZO scraps without further crushing as the cathode and anode. The electro-deoxidation behavior of various oxides exhibits differentiation, among which indium oxide is the most easily deoxidized. This difference hinders the formation of a dense alloy layer on the surface of the IGZO substrate, facilitating the transfer of oxygen ions and enabling continuous electrodeoxidation. Impurities such as aluminum and silicon can be significantly removed, with removal rates of 95.8 % and 75.7 %, respectively, which is also attributed to the difference in electrochemical reduction ability between impurity oxides and IGZO, as well as the solid-state existence of cathode products. The process of upcycling IGZO scraps contributes to recovery with straightforward operation and more adaptable implementation environment, which endows it with optimistic application potential.
引用
收藏
页码:2303 / 2310
页数:8
相关论文
共 50 条
  • [21] Electrical and optical properties of transparent conducting homologous compounds in the indium-gallium-zinc oxide system
    Moriga, Toshihiro
    Kammler, Daniel R.
    Mason, Thomas O.
    Palmer, George B.
    Poeppelmeier, Kenneth R.
    1999, American Ceramic Soc, Westerville (82)
  • [22] Electronic properties of amorphous indium-gallium-zinc oxide thin film fabricated by magnetron sputtering
    Cao, Mingjie
    Zhao, Ming
    Zhuang, Daming
    Guo, Li
    Ouyang, Liangqi
    Li, Xiaolong
    Song, Jun
    Cailiao Yanjiu Xuebao/Chinese Journal of Materials Research, 2015, 29 (01): : 51 - 54
  • [23] Nitroacetylacetone as a Cofuel for the Combustion Synthesis of High-Performance Indium-Gallium-Zinc Oxide Transistors
    Chen, Yao
    Wang, Binghao
    Huang, Wei
    Zhang, Xinan
    Wang, Gang
    Leonardi, Matthew J.
    Huang, Yan
    Lu, Zhiyun
    Marks, Tobin J.
    Facchetti, Antonio
    CHEMISTRY OF MATERIALS, 2018, 30 (10) : 3323 - 3329
  • [24] Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water
    Park, Jin-Seong
    Jeong, Jae Kyeong
    Chung, Hyun-Joong
    Mo, Yeon-Gon
    Kim, Hye Dong
    APPLIED PHYSICS LETTERS, 2008, 92 (07)
  • [25] A Comparative Study on Fluorination and Oxidation of Indium-Gallium-Zinc Oxide Thin-Film Transistors
    Lu, Lei
    Xia, Zhihe
    Li, Jiapeng
    Feng, Zhuoqun
    Wang, Sisi
    Kwok, Hoi Sing
    Wong, Man
    IEEE ELECTRON DEVICE LETTERS, 2018, 39 (02) : 196 - 199
  • [26] High-Performance Oxide TFTs With Co-Sputtered Indium Tin Oxide and Indium-Gallium-Zinc Oxide at Source and Drain Contacts
    Choi, Sung-Hwan
    IEEE ELECTRON DEVICE LETTERS, 2021, 42 (02) : 168 - 171
  • [27] Solution-Based Indium Zinc Oxide/Indium-Gallium-Zinc Oxide Double-Channel Thin-Film Transistors with Incorporated Hydrogen Peroxide
    Jeon, Woojin
    Choi, Pyungho
    Park, Areum
    Lee, Donghyeon
    Choi, Donghee
    Lee, Sangmin
    Choi, Byoungdeog
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2020, 20 (11) : 6643 - 6647
  • [28] Effect of Fluorine in a Gate Insulator on the Reliability of Indium-Gallium-Zinc Oxide Thin-Film Transistors
    Yamazaki, Haruka
    Ishikawa, Yasuaki
    Fujii, Mami N.
    Bermundo, Juan Paolo
    Takahashi, Eiji
    Andoh, Yasunori
    Uraoka, Yukiharu
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2016, 5 (05) : N17 - N21
  • [29] Channel Shape Effects on Device Instability of Amorphous Indium-Gallium-Zinc Oxide Thin Film Transistors
    Seo, Seung Gi
    Yu, Seung Jae
    Kim, Seung Yeob
    Jeong, Jinheon
    Jin, Sung Hun
    MICROMACHINES, 2021, 12 (01) : 1 - 13
  • [30] Performance improvement of amorphous indium-gallium-zinc oxide ReRAM with SiO2 inserting layer
    Pei, Yanli
    Mai, Biaoren
    Zhang, Xiaoke
    Hu, Ruiqin
    Li, Ya
    Chen, Zimin
    Fan, Bingfeng
    Liang, Jun
    Wang, Gang
    CURRENT APPLIED PHYSICS, 2015, 15 (04) : 441 - 445